www. belling .com . cn 1 p - channel mosfet with 0.12v schottky diode b l859 3 description BL8593 is designed for battery charging controller, which features p - channel mosfet characteristics and a 0.12v schottky diode for reverse current blocking. such reverse current blocking feature cut off the current when source voltage is r emoved , or lower than drain voltage, no matter the gate voltage indicating the p - mosfet on or off. BL8593 is also suitable for high side switch in a system with multi power supplies, when isolating different power supplies becomes essential. BL8593 can b lock rever se voltage as high as 10v. so it is safe enough for mobile phone system or other portable device powered by 1 cell li - ion battery. BL8593 is available in dfn2x2 - 6l (2 type of pin configuration), sc70 - 5 and dfn1x1 - 5. especially with the package d fn1x1 - 5, BL8593 make itself the smallest package available in the world. features ? pmosfet with sbd for reverse current blocking ? 0.12v schottky diode forward voltage ? range of operation input voltage: max 1 2 v ? c harging current up to 65 0ma ? environment tem perature: - 2 0 ? c ~85 ? c applications ? cell phone and other p ortable device f unction diagram ordering information / pin configuration / marking BL8593 ckctr dfn2x2 - 6l (compatible to dfn2x3 pin out) BL8593 c b kctr dfn2x2 - 6l (compatible to dfn2x2 pin out) BL8593 ca5tr sc70 - 5 BL8593 ckdtr dfn1x1 - 5l notice: yw means the year and week parts being manufactu red, subjected to change. oa is the code of the product , it will not be changed on any part. 6 . k 5 . d 4 . n c 1 . a 2 . s 3 . g o a y w 6 . k 5 . g 4 . s 1 . a 2 . n c 3 . d o a | y w 5 . n c 4 . d 1 . s 2 . g 3 . n c o a y w
www. belling .com . cn 2 b l8593 absolute maximum rating parameter symbol 5 sec steady state unit forward voltage ( source - drain ) v s d 12 v gate - source voltage (mosfet) v gs - 8~ + 0. 3 - 8~ + 0. 3 continuous drain current i d 0.8 0.5 ma pulsed drain current (mosfet) i dm 1 a maximum power dissipation p d 1 0.5 w operating junction temperature range t j ? 20 to 1 25 ? c storage temperature range t stg - 40 to 150 soldering recommendations (peak temperature) 260 ? c , 10s thermal resistance rating parameter device symbol typical maximum unit junction - to - ambient t 5 sec dfn2 x2 r thja 50 60 ? c /w dfn1x1 77 95 sc70 - 5 250 280 steady state dfn2 x2 105 1 2 0 dfn1x1 160 200 sc70 - 5 3 3 0 4 0 0 junction to case steady state dfn2 x2 r thj c 20 3 0 dfn1x1 33 40 sc70 - 5 150 175 electrical characteristics tj=25 ? c symbol parameter con ditions min typ max unit vth threshold voltage ids= - 10ua, vds=vgs - 1.0 - 0.7 - 0.4 v igs gate - source leakage current vgs=8v 0 12 2 0 u a idss1 pmos off - state leakage vgs=0, v s=9 v, vd=0v 0.5 5 u a idss2 pmos reverse block leakage vg=0, vs=0v, vd=4.5v 2 10 ua idson on C state drain current vs=5v, vg=1v, vd=4v - 80 0 - 6 50 - 5 0 0 ma rdson vds/idson vs=5v, vg=1v, vd=4v 1. 25 1.5 2 ohm vfsbd forward voltage of schottky vs= 4 v, vg=0v, ids=0, 0.08 0.12 0.16 v
www. belling .com . cn 3 b l8593 typical performance characteristics t=25 c unless specified. 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 - ids (ma) - vds (v) output characteristics vgs= - 1v vgs= - 2v vgs= - 3v vgs= - 4v 0 5 10 15 20 25 0 1 2 3 4 5 rdson (ohm) - vgs (v) on resistance vs vgs 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 100 200 300 400 500 600 - vds (v) - ids (ma) dropout voltage (vds) vs. charge current (ids), t = 25 o c vgs= - 5v vgs= - 4v vgs= - 3v vgs= - 2v vgs= - 1v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 100 200 300 400 500 600 - vds (v) - ids (ma) dropout voltage (vds) vs. charge current (ids), t = 80 o c vgs= - 5v vgs= - 4v vgs= - 3v vgs= - 2v vgs= - 1v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 100 200 300 400 500 600 - vds (v) - ids (ma) dropout voltage (vds) vs. charge current (ids), t = 125 o c vgs= - 5v vgs= - 4v vgs= - 3v vgs= - 2v vgs= - 1v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 100 200 300 400 500 600 - vds (v) - ids (ma) dropout voltage (vds) vs. charge current (ids), t = - 25 o c vgs= - 5v vgs= - 4v vgs= - 3v vgs= - 2v vgs= - 1v
www. belling .com . cn 4 b l8593 charge current vs usb voltage te sted on actual cell phone powered by mtk chipset 0 100 200 300 400 500 600 700 0 1 2 3 4 5 - ids (ma) - vgs (v) charge current (ids) vs. gate voltage - 25 c 25 c 80 c 125 c 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 - 50 0 50 100 150 vf (v) temperature ( o c) schottky diode forward voltage 0 50 100 150 200 250 300 350 400 450 500 5 5.5 6 6.5 7 7.5 8 charge current (ma) usb voltage (v) icharge
www. belling .com . cn 5 b l8593 package out line package dfn2x2 - 6 singl e pad devices per reel 3 000 unit m m package specification package dfn2x2 - 6 dual pad devices per reel 3 000 unit m m package specification
www. belling .com . cn 6 b l8593 package dfn1x1 - 5 devices per reel 3 000 unit mm package specification package sc70 - 5 devices per reel 3000 unit mm ` pac kage specification
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